Abstract
Impurity effects on the metal-semiconductor transition of hexagonal N P have been investigated by magnetic susceptibility, electrical resistivity, and thermoelectric power measurements. The transition temperature Tt is raised by addition of Ti, V, and Fe, and lowered by the addition of Co and Cu. Cr ions do not seem to be dissolved in NiS lattice. The sample containing 2.0% Cr shows, however, a negative Seebeck coefficients below Tt, which implies electron conduction, in contrast with pure NiS. Conduction electrons in this phase seem to be produced from sulfur vacancies. The transition mechanism is explained by the electronic phase diagram based on the Mott-Hubbard model.
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