On The Pressure And Temperature Dependent Ductile, Brittle Nature Of Hg0.91Mn0.09Te Semiconductor

S. Shriya1 , R. Sapkale1 , M. Varshney1 , R. Khenata2 and Dinesh Varshney1#

1 School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001, India.

2 Département de Technologie, Université de Mascara, 29000-Algeria

# Email: vdinesh33@rediffmail.com ; sapkale.raju@rediffmail.com


Abstract. 

The high-pressure structural phase transition and pressure as well as temperature induced elastic properties of cubic zincblende to rocksalt structures of Hg0.91Mn0.09Te compound have been performed using effective interionic interaction potential with emphasis on charge transfer interactions and covalent contribution. Estimated values of phase transition pressure and the volume discontinuity in pressure-volume phase diagram indicate the structural phase transition from ZnS to NaCl structure. From the investigations of elastic constants the pressure (temperature) dependent volume collapse/expansion, melting temperature TM, Hardness (HV), Poisson’s ratio Ȟ and Pugh ratio I (= BT/GH) the Hg0.91Mn0.09Te lattice infers mechanical stiffening, thermal softening, and ductile (brittle) nature. Keywords: Semiconductor, Pressure effects, Hardness, Brittle nature.

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http://aip.scitation.org/doi/pdf/10.1063/1.4980567