Resistivity and Magnetic Order in Ti2O3

L. L. Van Zandt1, J. M. Honig1 and J. B. Goodenough1

Abstract:

Electrical resistivities of pure and vanadium‐doped single crystals of Ti2O3${\mathrm{Ti}}_2{O}_3$ have been measured as a function of applied magnetic field strength and temperature. The anomalous high‐temperature increase in electrical conductivity has been confirmed. It is argued that the symmetry of Ti2O3${\mathrm{Ti}}_2{O}_3$ leads naturally to a two‐band model having bandwidths and an energy separation between band centers that are sensitive to the crystallographic axial ratio c/a$\mathrm{c/a}$. With this model, the change in conductivity with temperature can be adequately described on the basis of known variations in the c/a$\mathrm{c/a}$ ratio with temperature. The vanadium‐doped samples are good p‐type conductors and exhibit a negative magnetoresistance at low temperatures. With a model of inelastic scattering at trace impurities carrying a localized magnetic moment, it is possible to describe the negative magnetoresistance of vanadium‐doped samples provided the total, local (applied plus intrinsic) magnetic fields are within a few gauss of the applied field. It is concluded that the existence of antiferromagnetic order in Ti2O3${\mathrm{Ti}}_2{O}_3$ is in doubt and that the resistivity behavior can be readily interpreted without recourse to a magnetic‐ordering mechanism.

© 1968 The American Institute of Physics

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