Electronic structure of Cr1-δS (δ=0, 0.17) with NiAs-type crystal structure

M. Koyamaa, H. Satob,*, Y. Uedaa, C. Hiraib and M. Taniguchb,c

aKure National College of Technology, Agaminami 2-2-11, Kure 737-8506, Japan

bGradiate School of Science, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8526, Japan

cHiroshima Synchrotron Radiation Center, Hiroshima University, Kagamiyama 2-313, Higashi-Hiroshima 739-8526, Japan

ABSTRACT 

Valence-band and conduction-band electronic structure of CrS (δ=0) and Cr5S6 (δ=0.17) has been investigated by means of photoemission and inverse-photoemission spectroscopies. Bandwidth of the valence bands of Cr5S6 (8.5 eV) is wider than that of CrS (8.1 eV), though the Cr 3d partial density of states evaluated from the Cr 3p-3d resonant photoemission spectroscopy is almost unchanged between the two compounds with respect to the shapes including binding energies. The Cr 3d (t2g) exchange splitting energies of CrS and Cr5S6 are determined to be 3.9 and 3.3 eV, respectively


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https://arxiv.org/ftp/cond-mat/papers/0211/0211311.pdf