R. Avci and C. P. Flynn
Phys. Rev. Lett. 41, 428 – Published 7 August 1978
ABSTRACT
Resistivities of thin-film Cs-based alloys prepared by coevaporation at He temperature reveal charge transfer to high-valence impurities. Percolative transitions to new disordered insulating phases occur as the impurity content is increased. Metallic components of resistance exceeding 3×104Ω are observed near the percolation thresholds.
DOI:https://doi.org/10.1103/PhysRevLett.41.428
©1978 American Physical Society
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